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Issue DateTitleAuthor(s)
2010Dielectric properties of PbBO₃ perovskites with mixed-valence substitution in the B positionZalesskii, V.; Lemanov, V.
2011Strength of irradiated single-crystal siliconBrinkevich, D.; Prosolovich, V.; Yankovski, Yu.; Vabishchevich, S.
2014Physical and mechanical properties of silicon near the SiO2/Si interfaceБринкевич, Д. И.; Вабищевич, Н. В.; Вабищевич, С. А.; Просолович, В. С.
2013Physical and mechanical properties of silicon near the SiO2/Si interfaceBrinkevich, D.; Vabishchevich, N.; Vabishchevich, S.; Petlitski, A.; Prosolovich, V.; Yankovskii, Yu.
2010Emission current formation in Plasma electron emittersGruzdev, V.; Zalesski, V.
2011Structure and Electron-Transport Properties of Photoresist Implanted by Sb + ionsVabishchevich, N.; Brinkevich, D.; Volobuev, V.; Lukashevich, M.; Prosolovich, V.; Sidorenko, Yu.; Odzhaev, V.; Partyka, J.
2008Simulation of liquid phase accumulation for the centrifugal dewatering of activated sludgeMota, M.; Teixeira, J.; Abaev, G.; Yelshyna, I.; Yelshin, A.
2005Simulation of liquid phase accumulation at centrifugal dewatering of activated sludgeMota, M.; Teixeira, J.; Abaev, G.; Yelshyna, I.; Yelshin, A.
2008Equation for fitting dispersed systems gravity and centrifuge settling dataMota, M.; Yelshin, A.; Yelshina, I.
2010Особенности дефектообразования в кремнии, имплантированном ионами с удельной энергией ∼1 МэВ/НуклонВабищевич, С. А.; Вабищевич, Н. В.; Бринкевич, Д. И.; Просолович, В. С.; Янковский, Ю. Н.