Structure and Electron-Transport Properties of Photoresist Implanted by Sb + ions

Abstract

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1*1015/5*1016cm-2 with the ion current density 4π A/cm2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.