Please use this identifier to cite or link to this item: https://elib.psu.by/handle/123456789/2894
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dc.contributor.authorVabishchevich, N.-
dc.contributor.authorBrinkevich, D.-
dc.contributor.authorVolobuev, V.-
dc.contributor.authorLukashevich, M.-
dc.contributor.authorProsolovich, V.-
dc.contributor.authorSidorenko, Yu.-
dc.contributor.authorOdzhaev, V.-
dc.contributor.authorPartyka, J.-
dc.date.accessioned2014-06-19T07:13:42Z-
dc.date.available2014-06-19T07:13:42Z-
dc.date.issued2011-
dc.identifier.citationActa Physica Polonica A. - 2011. - V. 120, N 1. - P. 46-48. - Режим доступа: http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z1p11.pdfru_RU
dc.identifier.urihttps://elib.psu.by/handle/123456789/2894-
dc.description.abstractMorphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1*1015/5*1016cm-2 with the ion current density 4π A/cm2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.ru_RU
dc.language.isoenru_RU
dc.subjectФизикаru_RU
dc.subjectelectron-transportru_RU
dc.subjectphotoresistru_RU
dc.subjectSb+ ionsru_RU
dc.subjectфоторезистыru_RU
dc.subjectперенос электроновru_RU
dc.titleStructure and Electron-Transport Properties of Photoresist Implanted by Sb + ionsru_RU
dc.typeArticleru_RU
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