Please use this identifier to cite or link to this item: https://elib.psu.by/handle/123456789/25416
Title: Multibit structure for the formation of combined or alternating electron-ion beams
Authors: Antonovich, D.
Gruzdev, V.
Zalesski, V.
Soldatenko, P.
Issue Date: 2020
Publisher: Begell House Inc
Citation: Multibit structure for the formation of combined or alternating electron-ion beams / High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.24, 2020, issue 2 Pavel Soldatenko, V. Zalesski, D. Antonovich, V. Gruzdev
Abstract: Currently, sources of ion and electron beams make it possible to implement a wide range of effective technologies for processing materials and surface modifications. In some cases, a significant increase in the effectiveness of such technologies is achieved with simultaneous exposure to electron and ion beams through the use of two types of separate (electron and ion) sources. At the same time, experience in the development and use of plasma sources of charged particles shows the possibility of creating a combined electron-ion flow in one direction and in a single discharge system. In this work, we propose an experimental electrode structure of a plasma electron-ion source for the formation of a combined electron-ion or separate electron and ion beams. A number of its characteristics and the prospects for further development of an electron-ion source for industrial use on its basis are shown.
Keywords: Plasma source of charged particles
Electron-ion impact
Electron beams
Compensated ion beams
URI: https://elib.psu.by/handle/123456789/25416
metadata.dc.identifier.doi: 10.1615/HighTempMatProc.2020033966
Appears in Collections:Публикации в Scopus и Web of Science
Электрофизика. Плазменные эмиссионные системы.

Files in This Item:
File Description SizeFormat 
Antonovich_Multibit_structure_for_the_formation_2021_.pdf52.73 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.