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Название: Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon
Авторы: Vabishchevich, S.
Vabishchevich, N.
Brinkevich, S.
Brinkevich, D.
Prosolovich, V.
Lastovskii, S.
Дата публикации: 2024
Издатель: Springer Nature
Библиографическое описание: Vabishchevich, S.A., Vabishchevich, N.V., Brinkevich, S.D. et al. Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chem 58, 112–119 (2024). https://doi.org/10.1134/S001814392401017X
Аннотация: In this work, the effect of irradiation with 5-MeV electrons on the adhesive and strength properties of the films of diazoquinone–novolac photoresists FP9120, SPR-700, and S1813 G2 SP15 deposited on single-crystalline silicon wafers by spin-coating has been studied using the indentation method. It has been established that irradiation leads to an increase in the true microhardness of the photoresist films, most pronounced in SPR-700 films, caused by the crosslinking of phenol–formaldehyde resin molecules. It has been shown that the values of the specific peeling energy G of photoresist films on silicon increase upon irradiation as a result of the recombination of radicals at the photoresist/silicon interface with the formation of new covalent bonds Si–C and Si–O–C. The observed experimental results are explained taking into account the radiation-chemical and relaxation processes occurring in the bulk of the polymer film and at the interface.
URI (Унифицированный идентификатор ресурса): https://elib.psu.by/handle/123456789/43691
DOI: https://doi.org/10.1134/S001814392401017X
Располагается в коллекциях:Публикации в Scopus и Web of Science

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