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https://elib.psu.by/handle/123456789/2894| Title: | Structure and Electron-Transport Properties of Photoresist Implanted by Sb + ions |
| Authors: | Vabishchevich, N. Brinkevich, D. Volobuev, V. Lukashevich, M. Prosolovich, V. Sidorenko, Yu. Odzhaev, V. Partyka, J. |
| Issue Date: | 2011 |
| Citation: | Acta Physica Polonica A. - 2011. - V. 120, N 1. - P. 46-48. - Режим доступа: http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z1p11.pdf |
| Abstract: | Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1*1015/5*1016cm-2 with the ion current density 4π A/cm2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed. |
| Keywords: | Физика electron-transport photoresist Sb+ ions фоторезисты перенос электронов |
| URI: | https://elib.psu.by/handle/123456789/2894 |
| Appears in Collections: | Публикации в зарубежных изданиях |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| vabishhevich_2011_1_46-48.pdf | 642.07 kB | Adobe PDF |  View/Open |
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